| Autor: |
Sugamata, Kota, Tsuge, Hirofumi, Ikeda, Kiyoji, Yoshino, Michitaka, Kuriyama, Kazuo, Nakamura, Tohru |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p919-922, 4p |
| Abstrakt: |
This paper demonstrates ion implanted lateral GaN MISFETs using double ion implantation technology, which enables us to form Si ion implanted source/drain regions in Mg ion implanted p-well fabricated on free-standing GaN substrates. Maximum drain current of 39 mA/mm and maximum transconductance of 4.5 mS/mm for GaN MISFET with a gate length of 2 μm at an estimated Mg surface concentration of 2.2 × 1018 cm-3 were obtained. A threshold voltage was-0.5 V for the device. These results show that we successfully formed Si ion implanted n-type regions in the Mg ion-implanted layer and achieved innovative performance. |
| Databáze: |
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