| Autor: |
Han, Ki Jeong, Baliga, B. Jayant, Sung, Woong Je |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p684-688, 5p |
| Abstrakt: |
This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge. |
| Databáze: |
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