| Autor: |
Tsagaraki, Katerina, Nafouti, Maher, Peyre, Herve, Vamvoukakis, Konstantinos, Makris, Nikolaos, Kayambaki, Maria, Stavrinidis, Antonis, Konstantinidis, George, Panagopoulou, Marianthi, Alquier, Daniel, Zekentes, Konstantinos |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p653-656, 4p |
| Abstrakt: |
Different methods for cross-section characterization of SiC Trenched-singly-implanted vertical junction field effect transistors (TSI-VJFETs) are presented with the purpose to determine the epitaxial structure in terms of doping topography. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
