| Autor: |
Kajihara, Jun, Kuroki, Shinichiro, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Makino, Takahiro, Ohshima, Takeshi, Östling, Mikael, Zetterling, Carl Mikael |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p423-427, 5p |
| Abstrakt: |
4H-SiC pMOSFETs with Al-doped S/D and NbNi silicide ohmic contacts were demonstrated and were characterized at up to a temperature of 200 °C. For the pMOSFETs, silicides on p-type 4H-SiC with Nb/Ni, NbNi alloy, Ni and Nb/Ti were investigated, and the Nb/Ni silicide with the contact resistance of 5.04×10-3 Ωcm2 were applied for the pMOSFETs. |
| Databáze: |
Supplemental Index |
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