| Autor: |
Bonyadi, Yeganeh, Gammon, Peter M., Alatise, Olayiwola, Bonyadi, Roozbeh, Mawby, Philip A. |
| Zdroj: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p440-443, 4p |
| Abstrakt: |
In this paper, the application of a high temperature thermal oxidation and annealing process to 4H-SiC PiN diodes with 35 μm thick drift regions is explored, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material and underwent a thermal oxidation in dry pure O2 at 1550◦C followed by an argon anneal at the same temperature. Reverse recovery tests indicated a carrier lifetime increase of around 42% which is due to increase of excessive minority carriers in the drift region. The switching results illustrate that the use of this process is a highly effective and efficient way of enhancing the electrical characteristics of high voltage 4H-SiC bipolar devices. |
| Databáze: |
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