| Autor: |
Skvortsov, Arkady A., Pshonkin, Danila E., Luk'yanov, Mikhail N. |
| Zdroj: |
Key Engineering Materials; June 2018, Vol. 771 Issue: 1 p124-129, 6p |
| Abstrakt: |
The work is devoted to the study of defect formation processes in the near-surface layers of silicon under thermal shock conditions and to the effect of preliminary exposure in a constant magnetic field on this process. As a result of investigations it was established that dislocation half-loops near the local heat source are formed in the near-surface layers of Si (with a depth of up to 30 μm) after a current pulse of density j> 5.1010 A / m2 passing through the metallized film on the silicon surface. In addition, it was found that preliminary exposure of samples in a constant magnetic field leads to an increase in the dislocation density compared to samples not exposed in a magnetic field. |
| Databáze: |
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