| Autor: |
Regensburger, Stefan, Preu, Sascha, Mukherjee, Amlan kusum, Schonhuber, Sebastian, Kainz, Martin A., Winnerl, Stephan, Klopf, J. Michael, Lu, Hong, Gossard, Arthur C., Unterrainer, Karl |
| Zdroj: |
Terahertz Science and Technology, IEEE Transactions on; 2018, Vol. 8 Issue: 4 p465-471, 7p |
| Abstrakt: |
We demonstrate UV contact lithographically fabricated III-V field-effect transistors (FETs) examined over a bandwidth of 100 GHz-11.8 THz. The zero-bias device reaches a noise √ equivalent power as low as 250 pW/√Hz at 0.6 THz, which then increases as f4 at higher frequencies. The responsivity is modeled by a simple equivalent circuit, showing good agreement over the frequency range of two decades. The FETs have been characterized using a photomixer, a quantum cascade laser, and a free-electron laser, proving the versatility and large applicability of the detection concept. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
