| Autor: |
Fang, Yu-zhen, Kong, Xiang-jin, Wang, Dong-ting, Cui, Shou-xin, Liu, Jun-hai |
| Zdroj: |
Chinese Journal of Physics; August 2018, Vol. 56 Issue: 4 p1370-1377, 8p |
| Abstrakt: |
• Ga-doped rutile TiO2was investigated using first-principles density functional theory.• GaxTi16-xO32was direct band gap semiconductor and was more stable.• Metal-O-metal interactions were increased by Ga-doped.• Lower Ga doping amount leaded to the red shift by reducing their band gap.• GaxTi16-xO32had higher photo-response caused by induced impurity energy levels. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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