The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric DevicesThe authors are pleased to acknowledge the close collaboration with Inorgtech in precursor development, and that this work was carried out as part of Technology Group 07 of the UK MoD corporate research programme.

Autor: Lane, P.A., Crosbie, M.J., Wright, P.J., Donohue, P.P., Hirst, P.J., Reeves, C.L., Anthony, C.J., Jones, J.C., Todd, M.A., Williams, D.J.
Zdroj: Chemical Vapor Deposition; March 2003, Vol. 9 Issue: 2 p87-92, 6p
Abstrakt: Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid-delivery metal–organic (MO) CVD using the precursors La(thd)3 and Ni(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) dissolved in tetrahydrofuran and heptane. The LaNiO3 (LNO) was deposited at 630 °C in an oxidizing atmosphere, and the as-grown layers were highly crystalline and highly (110)-oriented on Si/SiO2. Electrical resistivity studies were performed and showed a dependence on the La/Ni ratio, the substrate used, and the post-deposition annealing conditions. A minimum electrical resistivity value of 300 μΩ cm was measured for LNO deposited on (0001) sapphire and rapidly annealed at 750 °C. The resistivity values of the LNO layers deposited onto silicon/silicon dioxide were higher, with a minimum value of 1 mΩ cm. The rapid annealing at 750 °C resulted in cracking of some of the LNO layers deposited onto the silicon substrates. However, the layers that were nickel-rich withstood the annealing treatment better and showed little evidence of cracking.
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