| Autor: |
Caraman, Iuliana, Evtodiev, Silvia, Untila, Dumitru, Palachi, Leonid, Susu, Oana, Evtodiev, Igor, Kantser, Valeriu |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; December 2017, Vol. 214 Issue: 12 |
| Abstrakt: |
Ga2S3single crystals have been obtained by chemical vapor transport (CVT) in iodine vapors. The Ga2S3compound was synthesized from Ga and S taken in stoichiometric quantities. The compound has been subjected to long term thermal annealing (TA) at the temperatures of 850 and 1070 K for 6 to 60 h in Zn vapors. After TA the natural surface of Ga2S3single crystals contain a cover layer. The photoluminescence, photoconductivity and electrical conductivity of this layer depend on treatment conditions (temperature and duration). Electrical conductivity of these samples is 3–5 magnitude orders higher than for untreated crystals. The treated single crystals contain both Ga2S3and ZnS crystallites. Thermal annealing of Ga2S3crystals in Zn vapors leads to shifting of fundamental absorption edge toward low energies and absorption coefficient increase in the spectral region of 2.4–3.0 eV. The band gap of AIIIBVIsemiconductors (GaS, GaSe, Ga2S3, Ga2Se3etc.)covers the spectral range between 1.2 eV and ∼5 eV. Specific chemical bonds allow to obtain single crystalline thin films with nanometric thicknesses, which can be used in electronic, photoelectronic, and luminescent devices. The doping and annealing in different conditions widen the physical properties of pristine materials. |
| Databáze: |
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