Electron spin resonance study of defects in Si‐SiO2structures induced by As+ion implantation
| Autor: | Stesmans, A., Braet, J., Witters, J., DeKeersmaecker, R. F. |
|---|---|
| Zdroj: | Journal of Applied Physics; March 1984, Vol. 55 Issue: 6 p1551-1557, 7p |
| Databáze: | Supplemental Index |
| Externí odkaz: |
|