| Abstrakt: |
High-voltage (HV) gallium nitride (GaN)-650-950 V- field-effect transistors (FETs) are becoming the next standard for power conversion. They provide costcompetitive, easy-to-embed solutions that reduce energy loss by more than 50%, shrink system size by more than 40%, and simplify power converter/inverter design and manufacturing. These benefits are being realized today in various markets, including consumer, industrial, server, servo motors and drives, solar, telecommunications, and electric vehicles. So what is driving this current industry momentum, and what more remains to be done to further quicken this adoption? |
