| Autor: |
Stavrinidis, Antonis, Konstantinidis, George, Vamvoukakis, Konstantinos, Zekentes, Konstantinos |
| Zdroj: |
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p407-410, 4p |
| Abstrakt: |
The self-aligned approach allowed to fabricate 4H-SiC VJFETs with conventional contact lithography with only 4 lithography steps. The main problem of this approach was the gate-source leakage current. In order to address this issue, a salicide process has been adopted resulting in a substantial reduction of the gate-source leakage current. The success of this approach paved the way for fabricating high power 4H-SiC devices with extremely low fabrication cost. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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