| Autor: |
Contreras, Sylvie, Konczewicz, Leszek, Arvinte, Roxana, Ben Messaoud, Jaweb, Wang, Tian Lin, Peyre, Hervé, Chassagne, Thierry, Zielinski, Marcin, Juillaguet, Sandrine |
| Zdroj: |
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p275-278, 4p |
| Abstrakt: |
Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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