| Autor: |
Zielinski, Marcin, Chassagne, Thierry, Arvinte, Roxana, Michon, Adrien, Portail, Marc, Contreras, Sylvie, Juillaguet, Sandrine, Peyre, Hervé |
| Zdroj: |
Materials Science Forum; May 2017, Vol. 897 Issue: 1 p79-82, 4p |
| Abstrakt: |
After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed. |
| Databáze: |
Supplemental Index |
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