| Autor: |
Gaffney, Monique S., Reaves, Casper M., Holmes, Archie L., DenBaars, Steven P., Smith, Roy S. |
| Zdroj: |
IFAC-PapersOnLine; June-July 1996, Vol. 29 Issue: 1 p719-724, 6p |
| Abstrakt: |
Real-time control of metalorganic chemical vapor deposition (MOCVD) processes has been shown to improve the composition and thickness precision in the growth of compound semiconductor films. A system model of the MOCVD process is developed to improve the application of control. The model is used to simulate growth of GaInAs. Estimates of the GaAs fraction, from simulated growths, are compared to measured composition results. The model estimates and post-growth data are in good agreement. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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