Enhancement of emission intensity in indirect‐gap AlxGa1−xAs (x=0.53) by nitrogen‐ion implantation
| Autor: | Makita, Yunosuke, Gonda, Shun‐ichi, Ijuin, Hachiro, Tsurushima, Toshio, Tanoue, Hisao, Maekawa, Shigeru |
|---|---|
| Zdroj: | Applied Physics Letters; January 1976, Vol. 28 Issue: 2 p103-105, 3p |
| Databáze: | Supplemental Index |
| Externí odkaz: |
|