| Autor: |
Liu, De Wei, Li, Tao, Dai, Hai Yang, Xue, Ren Zhong, Chen, Zhen Ping, Cao, Xing Zhong, Wang, Bao Yi |
| Zdroj: |
Diffusion and Defect Data Part A: Defect and Diffusion Forum; March 2017, Vol. 373 Issue: 1 p217-220, 4p |
| Abstrakt: |
The material of sulfur-hyperdoped silicon was prepared by ion implantation and then annealed by heat treating furnace and pulse laser respectively. The effects of annealing process on the absorption, raman shift, carrier concentration and mobility ratio of this material were researched. Furthermore, the doppler broadening spectrum of crystal silicon substrate and sulfur-hyperdoped silicon before and after annealing was presented by using a slow positron technique. And the relationship between the microstructure and photoelectric properties of the material was explored. The experimental results indicate that the absorption and carrier concentration of the sulfur-hyperdoped silicon annealed by pulse laser were higher than that of the samples annealed by heat treating furnace. And the doppler broadening spectrum shows that the photoelectric properties of this material were closely related to the defects in the material. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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