| Autor: |
Li, Yu Bo, Zhong, Jian Wei, Zhou, Li Ming, Sun, Chao Lun, Wang, Xiao, Yang, Hang Sheng, Milne, William |
| Zdroj: |
Materials Science Forum; November 2016, Vol. 879 Issue: 1 p1117-1122, 6p |
| Abstrakt: |
Cubic boron nitride (c-BN) is a wide bandgap III-V compound semiconductor potentially useful for solar-blind photodetectors. This paper describes work on the use of Sulphur doping to adjust the bandgap of c-BN films prepared by plasma-enhanced chemical vapor deposition (PECVD). An S-doped c-BN film based metal-semiconductor-metal (MSM) solar-blind ultraviolet (SBUV) photodetector was successfully fabricated and its electro-optical properties were characterized. The photocurrent shows peak responsivity at 254nm with sharp cutoff wavelengths at 220 and 300 nm, respectively, which is appropriate for use in solar-blind detection. The maximum response reached 1.55×10-7 A/W/cm2 with a rejection ratio of more than three orders of magnitude. The high solar-blind region UV response could be attributed to the successful substitution of boron by Sulphur and the suppression of B vacancies. The experimental results show the same peak in response at around 254nm as is found in the theoretical analysis. |
| Databáze: |
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