| Autor: |
Li, Rui-Gang, Wang, Zhan-Guo, Liang, Ji-Ben, Ren, Guang-Bao, Fan, Ti-Wen, Lin, Lan-Ying |
| Zdroj: |
Journal of Crystal Growth; 19950501, Vol. 150 Issue: 0 p1270-1274, 5p |
| Abstrakt: |
Three different types of GaAs metal-semiconductor field effect transistors (MESFET) by employing ion implantation, molecular beam epitaxy (MBE) and low-temperature MBE (LT MBE) techniques respectively were fabricated and studied in detail. The backgating (sidegating) measurement in the dark and in the light were carried out. For the LT MBE-GaAs buffered MESFETs, the output resistance R d and the peak transconductance g m were measured to be above 50 kΩ and 140 mS/mm, respectively, and the backgating and light sensitivity were eliminated. A theoretical model describing the light sensitivity in these kinds of devices is given, and good agreement with experimental data is reached. |
| Databáze: |
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