| Autor: |
Cobas, Enrique D., van ’t Erve, Olaf M. J., Cheng, Shu-Fan, Culbertson, James C., Jernigan, Glenn G., Bussman, Konrad, Jonker, Berend T. |
| Zdroj: |
ACS Nano; 20240101, Issue: Preprints |
| Abstrakt: |
We report room-temperature negative magnetoresistance in ferromagnet–graphene–ferromagnet (FM|Gr|FM) junctions with minority spin polarization exceeding 80%, consistent with predictions of strong minority spin filtering. We fabricated arrays of such junctions viachemical vapor deposition of multilayer graphene on lattice-matched single-crystal NiFe(111) films and standard photolithographic patterning and etching techniques. The junctions exhibit metallic transport behavior, low resistance, and the negative magnetoresistance characteristic of a minority spin filter interface throughout the temperature range 10 to 300 K. We develop a device model to incorporate the predicted spin filtering by explicitly treating a metallic minority spin channel with spin current conversion and a tunnel barrier majority spin channel and extract spin polarization of at least 80% in the graphene layer in our structures. The junctions also show antiferromagnetic coupling, consistent with several recent predictions. The methods and findings are relevant to fast-readout low-power magnetic random access memory technology, spin logic devices, and low-power magnetic field sensors. |
| Databáze: |
Supplemental Index |
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