| Autor: |
Zhang, Wogong, Yamamoto, Yuji, Oehme, Michael, Matthies, Klaus, Raju, Ashraful I., Srinivasan, Senthil, Korner, Roman, Gollhofer, Martin, Bechler, Stefan, Funk, Hannes, Tillack, Bernd, Kasper, Erich, Schulze, Jorg |
| Zdroj: |
Japanese Journal of Applied Physics; April 2016, Vol. 55 Issue: 4 |
| Abstrakt: |
Five silicon (Si) p++-n[?]-n++ samples were grown at various doping concentrations (1.0 x 1017-2.2 x 1017 cm[?]3) in an n[?] layer by using the reduced-pressure CVD technique. By using these samples, 30 x 2 um2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology.1 , 2 ) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumped-element model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations. |
| Databáze: |
Supplemental Index |
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