| Autor: |
Burst, James M., Duenow, Joel N., Kanevce, Ana, Moutinho, Helio R., Jiang, Chun Sheng, Al-Jassim, Mowafak M., Reese, Matthew Owen, Albin, David S., Aguiar, Jeffrey A., Colegrove, Eric, Ablekim, Tursun, Swain, Santosh K., Lynn, Kelvin G., Kuciauskas, Darius, Barnes, Teresa M., Metzger, Wyatt K. |
| Zdroj: |
IEEE Journal of Photovoltaics; November 2016, Vol. 6 Issue: 6 p1650-1653, 4p |
| Abstrakt: |
Advancing CdTe solar cell efficiency requires improving the open-circuit voltage (VOC) above 900 mV. This requires long carrier lifetime, high hole density, and high-quality interfaces, where the interface recombination velocity is less than about 104 cm/s. Using CdTe single crystals as a model system, we report on CdTe/CdS electrical and structural interface properties in devices that produce open-circuit voltage exceeding 950 mV. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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