| Autor: |
Mertens, Paul W., Lavizzari, Simone, Guerrieri, Stefano |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; September 2016, Vol. 255 Issue: 1 p309-312, 4p |
| Abstrakt: |
CMOS image sensors can suffer from background noise in absence of any light. In order to suppress this it is important to keep this noise, referred to as dark-current low. This implies that the internal generation current should be very low. Trace metal impurities have been reported to increase the generation current. In this study the trap-assisted generation current contributions due to 7 different metal impurities have been calculated. It was concluded that Cu and Mn impurities yield the highest generation current contribution. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
