| Autor: |
Sebaai, Farid, Witters, Liesbeth, Holsteyns, Frank, Wostyn, Kurt, Rip, Jens, Yukifumi, Yoshida, Lieten, Ruben R., Bilodeau, Steven, Cooper, Emanuel |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; September 2016, Vol. 255 Issue: 1 p3-7, 5p |
| Abstrakt: |
For the Ge nanowire formation in a gate-all-around (GAA) integration scheme, a selective etch of Si0.5Ge0.5 or Si0.3Ge0.7 selective to Ge is considered. Two wet process approaches were evaluated: a boiling TMAH as a commodity chemistry is compared with a formulated chemistry using a multi-stack SiGe/Ge layer as a test vehicle. The boiling TMAH exhibits an anisotropic etch of the SiGe whereas the formulated semi-aqueous chemistry removes the sacrificial SiGe by an isotropic etch which makes the process suitable for a Ge nanowire release process. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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