| Autor: |
Nakano, Yoshihiro, Asakawa, Yuji, Seki, Hirokazu, Seaman, Jeff, Burk, Albert A. |
| Zdroj: |
Materials Science Forum; May 2016, Vol. 858 Issue: 1 p489-492, 4p |
| Abstrakt: |
SiC wafer surface roughness is known to affect the electrical properties of certain power devices. As a result, inspection of the surface roughness can be a very important step for SiC device manufacturing processes. In this paper, we propose a newly fast surface roughness measurement method using Differential Interference Contrast (DIC) microscopy image. Results from this method were compared against white-light interference measurement system and a good correlation was confirmed. The comparison result confirmed that this method was a valid method to measure the surface roughness. This method enables users to inspect the surface roughness in 5 minutes (100mm wafer) and 10 minutes (150mm wafers), respectively. |
| Databáze: |
Supplemental Index |
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