| Autor: |
Gassmann, Jürgen, Yampolskii, Sergey V., Genenko, Yuri A., Reusch, Thilo C.G., Klein, Andreas |
| Zdroj: |
The Journal of Physical Chemistry - Part C; May 2016, Vol. 120 Issue: 19 p10466-10475, 10p |
| Abstrakt: |
The interface properties between Sn-doped In2O3(ITO) and the organic semiconductor α-NPD are studied using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) as well as with in situ current–voltage analysis in combination transport simulations using a self-consistent mean field model. In particular, ITO is sputtered onto α-NPD as required for transparent or inverted organic light-emitting diodes. We identify deposition conditions, which leave the organic molecules intact. The barrier heights determined by XPS/UPS for the inverted interfaces between undoped and doped α-NPD and ITO are 1.0 and 1.1 eV, respectively. These are in good agreement with barrier heights extracted from current–voltage simulations if the band width of the highest occupied molecular orbital (HOMO) is taken into account. The HOMO bandwidth determined by UPS is σUPS= 0.22 eV and that derived from simulations is σsim= 0.23 eV. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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