| Autor: |
Buehler, T M, McKinnon, R P, Lumpkin, N E, Brenner, R, Reilly, D J, Macks, L D, Hamilton, A R, Dzurak, A S, Clark, R G |
| Zdroj: |
Nanotechnology; October 2002, Vol. 13 Issue: 5 p686-690, 5p |
| Abstrakt: |
We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal of using the nuclear spins of31P donors in28Si as qubits, controlled by metal surface gates and measured using single-electron transistors (SETs). The accurate registration of31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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