| Autor: |
Lysenko, Vladimir, Gomeniuk, Y.V., Kudina, Valeriya N., Garbar, Nikolay, Kondratenko, Sergey, Melnichuk, Yevgenij Ye., Kozyrev, Yurii N. |
| Zdroj: |
Journal of Nano Research; February 2016, Vol. 39 Issue: 1 p178-188, 11p |
| Abstrakt: |
Conductivity and capacitance in structures with Ge nanoclusters grown on oxidized Si (001) with different morphology have been investigated for the temperature range 120-290 K and frequencies 1 kHz-1MHz in co-planar geometry. It was found that structures exhibited T-1/3 conductivity dependence. The Mott’s variable range hopping through quasi-band of localized states at the Fermi level of Ge nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width depends of surface morphology varying in the range 110-130 meV, while the middle of the band is located at Ev+140 meV. The peak of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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