| Autor: |
Zervos, Matthew, Vasile, Eugenia, Vasile, Eugeniu, Karageorgou, Evangelia, Othonos, Andreas |
| Zdroj: |
The Journal of Physical Chemistry - Part C; January 2016, Vol. 120 Issue: 1 p11-20, 10p |
| Abstrakt: |
The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3and SnO2nanowires followed by processing under H2S between 100 and 500 °C have been investigated for their use in quantum dot sensitized solar cells. We find that the CuS/Sn:In2O3nanowires obtained between 100 and 200 °C consist of hexagonal CuS and cubic In2O3but higher temperatures lead to the formation of Cu0.23In2.59S4nanowires. Moreover, we observed the existence of SnO2quantum dots in tetragonal Cu2SnS3nanowires obtained at 400–500 °C which are responsible for ultraviolet emission at 3.65 eV and a breakdown of the dipole forbidden rule in SnO2.The CuS/Sn:In2O3nanowires obtained at lower temperatures exhibit better rectifying current–voltage characteristics and higher currents, but we did not observe negative differential resistance, as expected from a p–n tunnel junction, although this occurred by bringing Sn:In2O3nanowires in weak contact with p-type CuS, similar to a cat’s whisker device. We discuss the origin of the negative differential resistance which was also observed in connection with the TiO2barriers deposited on the transparent conducting oxide anode and its importance for quantum dot sensitized solar cells. |
| Databáze: |
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