| Autor: |
Rattana, Tanattha, Suwanboon, Sumetha, Kedkaew, Chittra, Wanichchang, Kumariga, Choeysuppaket, Attapol |
| Zdroj: |
Key Engineering Materials; January 2016, Vol. 675 Issue: 1 p225-228, 4p |
| Abstrakt: |
In this research, NiO/ZnO heterojunction thin films were fabricated on a ITO substrate by a sol–gel technique. The as-prepared thin films were annealed at various temperatures. The effect of annealing temperature on structural, surface morphology and electrical properties of thin films was investigated by XRD, FESEM and I-V characteristic measurement. The XRD results revealed that NiO/ZnO thin film was polycrystalline and exhibited better crystallization when annealing temperature was increased. The current-voltage curve of all sample exhibited the diode behaviour. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
