| Autor: |
Paranchich, S., Paranchich, Yu., Andriichuk, M., Makogonenko, V., Romanyuk, O. |
| Zdroj: |
Inorganic Materials; June 2001, Vol. 37 Issue: 6 p564-566, 3p |
| Abstrakt: |
CdxHg1 – xTe〈V〉 (x= 0.9–0.95) crystals were prepared by two versions of Bridgman growth, and their optical homogeneity and transport properties were studied. The electrical resistivity of the crystals was 104to 108Ω m. From the temperature dependences of the Hall coefficient, the activation energy of the vanadium level in CdxHg1 – xTe〈V〉 was determined to be 0.73–0.82 eV. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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