Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results
| Autor: | Gromov, D., Elesin, V., Polevich, S., Adamov, Yu., Mokerov, V. |
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| Zdroj: | Russian Microelectronics; March 2004, Vol. 33 Issue: 2 p111-115, 5p |
| Abstrakt: | An experiment is reported on the effect of 60Co gamma rays or 45-keV x-ray photons on the GaAs/(Al, Ga)As PHEMT. It is shown that x-ray treatment can improve the dc performance of the device in some cases. This finding is attributed in part to the annealing or modification of DX centers. |
| Databáze: | Supplemental Index |
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