| Autor: |
Rudenko, K., Sukhanov, Ya., Bazaev, N. |
| Zdroj: |
Russian Microelectronics; July 2003, Vol. 32 Issue: 4 p214-218, 5p |
| Abstrakt: |
An experiment is carried out to evaluate phase detection as a method for the optical-emission monitoring of SiO2/Si fluorine-plasma etching, the driving frequency serving as the reference frequency. It is shown that the output signal-to-noise ratio can thus be increased several times, so that the minimum percentage etch area for which endpoint detection is possible will be reduced from 2.1 to 0.4%. It is concluded that the new method may be practical in the etching of small windows. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink