| Autor: |
Griebl, E., Stier, A., Krenzer, M., Kastner, M., Reisinger, T., Preis, H., Gebhardt, W. |
| Zdroj: |
Journal of Crystal Growth; 1998, Vol. 184 Issue: 1 p853-856, 4p |
| Abstrakt: |
Photoluminescence-excitation (PLE) measurements of wide ZnSe/Zn 1− x Mg x Se single quantum wells (SQW) are presented, performed under high hydrostatic pressure up to 4 GPa. The fully strained samples have been grown by MBE on GaAs(0 0 1) substrates or (1 1 0) substrates. The well transitions 1nH 1s and 1mL 1s with n = 1, 2, 3, 4, 5 and m = 1, 2 were recorded as well as excitonic signals from the barrier material at 2 K and their pressure dependence were determined. A cross-over between the 11L and 13H, as well as between the 12L and 14H transitions, was observed above 1.2 GPa. The transitions were assigned using a modified Kronig Penney model. The exciton binding energy was derived from the energy difference between the 11H 1s and the 11H 2s transitions. |
| Databáze: |
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