| Autor: |
Krol, Krystian, Sochacki, Mariusz, Turek, Marcin, Żuk, Jerzy, Borowicz, Pawel, Teklińska, Dominika, Konarski, Piotr, Miśnik, Maciej, Domanowska, Alina, Michalewicz, Anna, Szmidt, Jan |
| Zdroj: |
Materials Science Forum; June 2015, Vol. 821 Issue: 1 p496-499, 4p |
| Abstrakt: |
This paper describes the effects of phosphorus implantation into n-type 4H-SiC substrate prior to standard dry oxidation process. Phosphorus incorporation has been reported to be one of the most efficient means of increasing SiC MOSFET field mobility however the physical basis of this phenomenon is still not clear. The aim of this research is to investigate the influence of phosphorus implantation on trap density profile close to conduction band of silicon carbide and to gain understanding of physical processes responsible for observed trap density improvement in phosphorus related oxidation technologies of silicon carbide. |
| Databáze: |
Supplemental Index |
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