PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure

Autor: Ryndya, S.M., Kargin, N.I., Gusev, A.S., Pavlova, E.P.
Zdroj: Materials Science Forum; June 2015, Vol. 821 Issue: 1 p213-216, 4p
Abstrakt: Silicon carbide thin films were obtained on Si (100) and (111) substrates by means of vacuum laser ablation of α-SiC ceramic target. The influence of substrate temperature on composition, structure and surface morphology of experimental samples was examined using Rutherford backscattering spectrometry (RBS), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM), atomic force microscopy (AFM), selected area electron diffraction (SAED) and X-ray diffraction (XRD) methods.
Databáze: Supplemental Index