| Autor: |
Arvinte, Roxana, Zielinski, Marcin, Chassagne, Thierry, Portail, Marc, Michon, Adrien, Kwasnicki, Pawel, Juillaguet, Sandrine, Peyre, Hervé |
| Zdroj: |
Materials Science Forum; June 2015, Vol. 821 Issue: 1 p149-152, 4p |
| Abstrakt: |
An exhaustive experimental study of the influence of C/Si ratio on voluntary incorporation of nitrogen (N) and aluminum (Al) in 4H-SiC thin films is presented. The films were grown by chemical vapor deposition (CVD) in a horizontal, hot wall CVD reactor on Si- and C-face substrates, under Si-rich and C-rich conditions. Under some conditions the observed variation of dopant incorporation with C/Si ratio could be clearly attributed to the site competition effects, while in several cases other mechanisms have to be taken into account. |
| Databáze: |
Supplemental Index |
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