| Autor: |
Gorb, Alla, Korotchenkov, Oleg, Kuryliuk, Vasyl, Medvid, Artur, Nadtochiy, Andriy, Podolian, Artem |
| Zdroj: |
Advanced Materials Research; July 2015, Vol. 1117 Issue: 1 p23-25, 3p |
| Abstrakt: |
Irradiation of SiGe-on-Si structures by pulsed Nd:YAG laser with intensities 1.0 MW/cm2 leads to the formation of Ge nanocones. As a result increases the surface photovoltage (SPV) signal up to 10 times. The SPV decays do not speed up with the radiation, thus indicating that the laser treatments do not cause an increase in the concentration of recombination centers at interfaces. Therefore the fabrication technique proposes here may be considered to be an effective approach of producing cost-competitive photosensors based on SiGe/Si. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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