Autor: |
Shain, Farah Lyana, Mani, Azmizam Manie, Li, Lam Mui, Shuib, Umar Faruk, Salleh, Saafie, Alias, Afishah, Mohamad, Khairul Anuar |
Zdroj: |
Advanced Materials Research; July 2015, Vol. 1119 Issue: 1 p29-33, 5p |
Abstrakt: |
This paper investigates the dependence of pressure onto characteristic of Aluminium Zinc Oxide (AZO) thin films. Films were deposited on a glass substrate by RF Magnetron Sputtering using AZO ceramic target with 99.99% purity. Sputtering was performed with RF power of 100 Watt and the deposition times were fixed at 40 minutes. The argon pressures were varied from 10 sccm to 30 sccm in order to achieve different working pressure during deposition in order to study the effect of pressure towards characteristic of films. AZO thin films on different argon pressure were successfully deposited onto glass substrate. All films are polycrystalline with (0 0 2) preferential orientation and fully transparent films with high transparency above 80 percent were achieved. The film deposited at 10 sccm argon flow exhibit the highest growth rate at 7.9 nm/m, highest intensity XRD peak with higher crystalline quality and lowest resistivity that is 2.7 x 10ˉ2 Ω cm . |
Databáze: |
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