| Autor: |
Cheong, Hung‐Seob, Hong, Young‐Kue, Hong, Chang‐Hee, Choi, Yoon‐Ho, Leem, Shi‐Jong, Jae Lee, Hyung |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; August 2002, Vol. 192 Issue: 2 p377-382, 6p |
| Abstrakt: |
The effects of growth parameters on growth behavior of Pendeo‐epitaxial GaN layers in 〈1$ \bar 1 $00〉 patterned GaN seed stripes on sapphire were systematically investigated to improve the structural properties of the overgrown layers. It was found that the ratio of lateral to vertical growth rate (γ) is strongly affected by changes in growth temperature, reactor pressure, and V/III ratio, which have an effect on the distribution of crystallographic tilt among the wing regions. Also, the crystallographic anisotropy, which was determined from the results of (0002) X‐ray diffraction rocking curves taken perpendicular and parallel to the seed stripe direction, can be improved with relatively high V/III ratio. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
