SiC bipolar devices
| Autor: | Chelnokov, V.E. |
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| Zdroj: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology; January 1992, Vol. 11 Issue: 1-4 p103-111, 9p |
| Abstrakt: | This paper presents some parameter calculations and experimental data relating to basic bipolar devices of SiC, namely diodes, transistors and dynistors. Some of the result were reported in an earlier publication. It has been shown theoretically that the basic parameters of SiC junction devices might be higher by an order of magnitude or more than those of analogous silicon-based devices. |
| Databáze: | Supplemental Index |
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