Growth of chemically deposited ZnO and ZnO-SiO2 on Pt buffered Si substrate

Autor: V, A D M, Candidato, R T, Bagsican, F R G, Odarve, M K G, Jabian, M E, Sambo, B R B, Vequizo, R M, Alguno, A C
Zdroj: IOP Conference Series: Materials Science and Engineering; June 2015, Vol. 79 Issue: 1 p012026-012026, 1p
Abstrakt: Growing ZnO on Si via low-cost CBD is difficult owing to the large lattice mismatch between ZnO and Si and the intricate control of nanoparticle aggregation. In this work, a Pt buffer layer and addition of SiO2 on the chemical solution were introduced. The effect of these parameters on the resulting morphology and composition were investigated using SEM-EDX and FTIR. Pt-coated Si showed higher density of ZnO nanostructure growth than bare Si due to the additional nucleation sites provided by Pt. Moreover, SiO2 addition resulted to a different ZnO nanostructure.
Databáze: Supplemental Index