| Abstrakt: |
We have studied the cathodoluminescence of AlxGa1 – xAs/GaAs multilayers grown on ridge‐type triangles by molecular beam epitaxy. The compositional variation of Al, as well as the distribution of impurity and/or defect, was revealed by variations in the cathodoluminescence spectra and images. The Al composition in an AlxGa1 – xAs layer was highest in the (111)A facet and decreased in the order (100), (411)A, (111)‐δ and (110) facets. On the other hand, the carbon concentration was highest in the (411)A facet and decreased in the order (111)A, (111)‐δ, (100) and (110) facets. It should be noted that the (111)‐δ facet has a significant effect on the redistribution of Al. Although our ridge‐type triangles are rather large for the quantum structures, these data have elucidated the self‐organization mechanism of the AlxGa1 – xAs/GaAs system and have yielded information on the design of quantum structures. We conclude that cathodoluminescence observation is a powerful tool for studying the compositional variation or band structure of three‐dimensional microscale or nanoscale construction. |
