Planar photodiodes based on p-HgCdTe (x = 0.22) epilayers grown by molecular beam epitaxy

Autor: Ovsyuk, V. N., Remesnik, V. G., Studenikin, S. A., Suslyakov, A. O., Talipov, N. K., Vasil'ev, V. V., Zahar'yash, T. L., Sidorov, Y. G., Dvoretsky, S. A., Mikhaylov, N. N.
Zdroj: Infrared Physics & Technology; 1996, Vol. 37 Issue: 3 p321-324, 4p
Databáze: Supplemental Index
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