Photoluminescence study of silicon solar cells irradiated with large fluence electrons or protons11This paper was presented at the 7th Int. Symp. on Advanced Nuclear Energy Research, JAERI, Takasaki, Japan, March 18–20 1996.

Autor: Hisamatsu, Tadashi, Kawasaki, Osamu, Matsuda, Sumio, Tsukamoto, Kazuyoshi
Zdroj: Radiation Physics and Chemistry; January 1999, Vol. 53 Issue: 1 p25-30, 6p
Abstrakt: In order to investigate the anomalous degradation of space silicon solar cells which was found in large fluence region, photoluminescence measurements are carried out for the cells irradiated with 1 MeV electrons with a fluence exceeding 1×1016e/cm2and 10 MeV protons with a fluence exceeding 1×1013p/cm2. For both irradiation, the intensity of boron-related bound exiton line decreases with fluence and it disappears at the fluences where the anomalous degradation occurs. The dominant defect is a complex of an interstitial carbon and an interstitial oxygen (CI–OI). The generation of five-vacancy-defects was also observed for the proton irradiation. Variations of photoluminescence line intensity are discussed in terms of displacement damage dose calculated based on non-ionizing energy loss (NIEL).
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