| Autor: |
Mei, X.A., Chen, M., Liu, J., Liu, R.F. |
| Zdroj: |
Key Engineering Materials; November 2014, Vol. 633 Issue: 1 p261-264, 4p |
| Abstrakt: |
The electrical properties of Gd-doped bismuth titanate Bi4-xGdxTi3O12 (BGT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the ceramics with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the ceramics with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BGT ceramic with x=0.8 were above 16μC/cm2 and 70KV/cm , respectively. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
