Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions
| Autor: | Kalinina, E. V., Khotujanov, G. F., Zubrilov, A. S., Tsvetkov, D. V., Vatnik, M. P., Soloviev, V. A., Tretjakov, V. D., Kong, H., Dmitriev, V. A. |
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| Zdroj: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 1997, Vol. 46 Issue: 1 p259-262, 4p |
| Databáze: | Supplemental Index |
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