| Autor: |
Daly, S.E., McGlynn, E., Henry, M.O., Campion, J.D., McGuigan, K.G., do Carmo, M.C., Nazaré, M.H. |
| Zdroj: |
Materials Science and Engineering B: Solid-State Materials for Advanced Technology; January 1996, Vol. 36 Issue: 1-3 p116-119, 4p |
| Abstrakt: |
The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurements show that all the defect spectra are similar and pseudo-donor in nature. The defects are attributed to complexes of oxygen and the Group II impurity. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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