| Autor: |
Wostyn, Kurt, Dhayalan, Sathish K., Hikavyy, Andriy, Loo, Roger, Douhard, Bastien, Moussa, Alain, Rondas, Dirk, Kenis, Karine, Mertens, Paul W., Holsteyns, Frank, De Gendt, Stefan, Profijt, Harald B. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; September 2014, Vol. 219 Issue: 1 p20-23, 4p |
| Abstrakt: |
Epitaxial growth requires a clean starting surface for the growth of a high-quality crystalline layer. For epitaxy on Si, an HF-last wet clean followed by an in-situ high-temperature hydrogen bake is the reference pre-epi clean sequence to obtain an oxygen-free surface [1, 2]. The temperature required to remove all residual oxygen also makes the surface atoms mobile, resulting in reflow. The high temperatures used during the H2-bake can also result in intolerable doping profile changes. A lower temperature pre-epi clean sequence is required to avoid this reflow, especially when moving away from Si. In addition the high temperatures needed during a H2-bake would result in the relaxation of high mobility channels, e.g. strained Si1-xGex or III-V materials [3]. Several low temperatures pre-epi cleaning solutions have been proposed in the past, e.g. GeH4-assisted H2-bake [4] or more recently, a GeH4-assisted HCl clean [5]. In this study we looked at the interaction between HF-last wet clean and the in-situ GeH4-assisted HCl clean prior to Si0.8Ge0.2-on-Si epitaxy. |
| Databáze: |
Supplemental Index |
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